LB125E discrete semiconductors r dc components co., ltd. technical specifications of npn epitaxial planar transistor pinning 1 = base 2 = collector 3 = emitter description designed for lighting applications and switch mode power supplies . characteristic symbol rating unit collector-base voltage vcbo 600 v collector-emitter voltage vceo 400 v emitter-base voltage vebo 9 v collector current(dc) ic 5 a collector current(pluse) ic 8 a total power dissipation(t c=25oc) pd 40 w junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) to-220ab dimensions in inches and (millimeters) .625(15.87).570(14.48) .562(14.27).500(12.70) .055(1.39).045(1.15) .185(4.70).173(4.40) .405(10.28) .380(9.66) .295(7.49).220(5.58) .350(8.90).330(8.38) .640 (16.25) typ .055(1.40).045(1.14) .037(0.95).030(0.75) .100 (2.54) typ .024(0.60).014(0.35) f.151 f(3.83) typ 1 2 3 rank b1 b2 b3 b4 b5 range 8~17 15~21 19~25 23~31 29~35 classification of hfe1 characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo 600 - - v ic=1ma, ie=0 collector-emitter breakdown voltage bvceo 400 - - v ic=10ma, ib=0 emitter-base breakdown volatge bvebo 9 - - v ie=10ma, ic=0 collector cutoff current icbo - - 100 ma vcb =800v, ie=0 iceo - - 100 ma vce =400v, ib=0 vce(sat)1 - - 0.5 v ic=1a, ib=0.2a collector-emitter saturation voltage (1) vce(sat)2 - - 0.7 v ic=2a, ib=0.4a vce(sat)3 - - 1.1 v ic=3a, ib=0.75a base-emitter saturation voltage (1) vbe(sat)1 - - 1.1 v ic=1a, ib=0.2a vbe(sat)2 - - 1.2 v ic=2a, ib=0.4a dc current gain(1) hfe1 8 - 35 - ic=2a, vce=5v hfe2 10 - - - ic=10ma, vce=5v electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2%
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